Avtor/Urednik		Vrtačnik, D; Casar, B; Resnik, D; Aljančič, U; Možek, M; Amon, S
Naslov		Radiation hardness of composite nitride-oxide films
Tip		članek
Vir		In: Smole F, Topič M, Šorli I, editors. Proceedings of the 37th international conference on microelectronics, devices and materials and the workshop on optoelectronic devices and applications; 2001 Oct 10-12; Bohinj. Ljubljana: Society for microelectronics, electronic components and materials,
Leto izdaje		2001
Obseg		str. 285-90
Jezik		eng
Abstrakt		Total irradiation dose effect in metal-oxide-.semiconductor (MOS) and composite metal-nitride-oxide-semiconductor (MNOS) capacitors with oxide thicknesses from 130 nm to 285 nm and nitride thicknesses of 38 nm and 75 nm was studied. It was found that the flatband voltage shift change.s approximately as a square of the oxide thickness. Experiments showed that MOS capacitor structures are more radiation resistant at negative gate electric fields /Eg/>-0.3 MV/cm, and that MNOS capacitor structures are more efficient if the positive gate electric fields are applied.
Deskriptorji		NITRIC OXIDE MATERIALS TESTING RADIATION DOSAGE HARDNESS TESTS