Avtor/Urednik		Vrtačnik, D; Križaj, D; Mali, T; Čašar, B; Resnik, D; Aljančič, U; Možek, M; Amon, S
Naslov		Influence of radiation on characteristics of FOXFET biased silicon microstrip detector
Tip		članek
Vir		In: Smole F, Topič M, Šorli I, editors. Proceedings of the 37th international conference on microelectronics, devices and materials and the workshop on optoelectronic devices and applications; 2001 Oct 10-12; Bohinj. Ljubljana: Society for microelectronics, electronic components and materials,
Leto izdaje		2001
Obseg		str. 117-22
Jezik		eng
Abstrakt		Radiation hardness of-fabricated FOXFET biased ,silicon microstrip detector has been characterized on gamma irradiation. Basic detector parameters such as leakage current, strip self-bias voltage and dynamic resistance of biasing resistors have been examined. Leakage current deriving from surface and bulk damage has been separated by the use of gated diode structures.
Deskriptorji		SILICON MATERIALS TESTING RADIATION DOSAGE GAMMA RAYS HARDNESS TESTS