Author/Editor | Vrtačnik, D; Križaj, D; Mali, T; Čašar, B; Resnik, D; Aljančič, U; Možek, M; Amon, S | |
Title | Influence of radiation on characteristics of FOXFET biased silicon microstrip detector | |
Type | članek | |
Source | In: Smole F, Topič M, Šorli I, editors. Proceedings of the 37th international conference on microelectronics, devices and materials and the workshop on optoelectronic devices and applications; 2001 Oct 10-12; Bohinj. Ljubljana: Society for microelectronics, electronic components and materials, | |
Publication year | 2001 | |
Volume | str. 117-22 | |
Language | eng | |
Abstract | Radiation hardness of-fabricated FOXFET biased ,silicon microstrip detector has been characterized on gamma irradiation. Basic detector parameters such as leakage current, strip self-bias voltage and dynamic resistance of biasing resistors have been examined. Leakage current deriving from surface and bulk damage has been separated by the use of gated diode structures. | |
Descriptors | SILICON MATERIALS TESTING RADIATION DOSAGE GAMMA RAYS HARDNESS TESTS |