Author/Editor     Vrtačnik, D; Križaj, D; Mali, T; Čašar, B; Resnik, D; Aljančič, U; Možek, M; Amon, S
Title     Influence of radiation on characteristics of FOXFET biased silicon microstrip detector
Type     članek
Source     In: Smole F, Topič M, Šorli I, editors. Proceedings of the 37th international conference on microelectronics, devices and materials and the workshop on optoelectronic devices and applications; 2001 Oct 10-12; Bohinj. Ljubljana: Society for microelectronics, electronic components and materials,
Publication year     2001
Volume     str. 117-22
Language     eng
Abstract     Radiation hardness of-fabricated FOXFET biased ,silicon microstrip detector has been characterized on gamma irradiation. Basic detector parameters such as leakage current, strip self-bias voltage and dynamic resistance of biasing resistors have been examined. Leakage current deriving from surface and bulk damage has been separated by the use of gated diode structures.
Descriptors     SILICON
MATERIALS TESTING
RADIATION DOSAGE
GAMMA RAYS
HARDNESS TESTS